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High Power RF Flange Resistor 1200W with Ceramic Composition and Wide Operating Temperature Range -55°C to +165°C

起源の場所	四川、中国
ブランド名	BONENS
モデル番号	RIG

プロダクト細部

仕様:

800w～1200w

包装形態:

箱入り

パッケージ /ケース:

ビニール袋

説明:

端子 10Ω 50Ω RF 抵抗器

抵抗:

1 ～500Ω、1 ～500Ω

耐性耐性:

±5％

項目名:

RIG ハイパワーレジスタ RF レジスタ 1000 ワット 50 オーム 100 オーム

テクノロジー:

陶器の組成

パッケージタイプ:

パッケージタイプ

温度係数:

±300×10-6/℃

動作温度:

-55℃～+165℃

パワー (ワット):

1W～1200W

定格電力:

1～1200W

ハイライト:

High Power RF Chip Resistor

Flange RF Resistor 1000w

RF Resistor with 50ohm Terminals

支払及び船積みの言葉

最小注文数量

100

製品の説明

Product Description

100W 150W 200W 250W 400W 800W 1000W 500W high power Terminals 10ohm 50ohm rf resistor picture

100W 150W 200W 250W 400W 800W 1000W 500W high power Terminals 10ohm 50ohm rf resistor drawing

All RF flange resistor can do with one terminal or Two terminals

100W one terminal resistor drawing

150W two terminals rf resistor drawing

250W 10ohm 50ohm two terminals rf resistor drawing

400W 10ohm 50ohm two terminals rf resistor drawing

500W 10ohm 50ohm one terminals rf resistor drawing

600w 10ohm 50ohm one terminals rf resistor drawing

800W 10ohm 50ohm two terminals rf resistor drawing

1000W 10ohm 50ohm One terminals rf resistor drawing

Specification

100W 150W 200W 250W 400W 800W 1000W 500W high power Terminals 10ohm 50ohm rf resistor Parameters

Electrical Characteristics
Range of nominal resistance	1 ~500Ω
Range of nominal resistance	±5%
Frequency range	0~2GHz
Standing wave ratio	1.2~1.3
Insulation resistance	≥ 1GΩ
Withstand voltage	500V/1 mm (Substrate thickness)
Environment Characteristics
Rated power	1~1200W (70°C)
Temperature range	-55°C~+165°C
TCR	±300×10-6/°C
Temperature shock (-55°C/+125°C, 3 times)	ΔR≤±5%R
Moisture proof (GJB306A-96-Method106)	ΔR≤±5%R
Vibration (10-500HZ, 0.75mm, 6h)	ΔR≤±3%R, No mechanical damage
Test at low temperature (-55°C, 24h)	ΔR≤±5%R
Load life (96)	ΔR≤±5%
Collision	ΔR≤±3%R
Physical Characteristics
Terminal strength(10N,5S)	No loose and fall off
Solderability(240℃,3s)	Tin layer covering area of 95%